BUY49S high voltage npn silicon transistor description: the central semiconductor BUY49S is a npn silicon transistor designed for high voltage, high current applications. maximum ratings: (t c =25c) symbol units c ollector-base voltage v cbo 250 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 6.0 v continuous collector current i c 3.0 a peak collector current i cm 5.0 a power dissipation (t a =25c) p d 1.0 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 15 c/w thermal resistance ja 175 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =200v 0.1 a i cbo v cb =200v, t c =150c 50 a bv cbo i c =100a 250 v bv ceo i c =20ma 200 v bv ebo i e =1.0ma 6.0 v v ce(sat) i c =500ma, i b =50ma 0.2 v v be(sat) i c =500ma, i b =50ma 1.1 v h fe v ce =5.0v, i c =20ma 40 h fe v ce =5.0v, i c =500ma 40 h fe v ce =2.0v, i c =20ma, t c =?55c 16 f t v ce =10v, i c =100ma 50 mhz c ob v cb =10v, i e =0, f=1.0mhz 30 pf t on v cc =20v, i c =500ma, i b1 =i b2 =50ma 0.3 s t off v cc =20v, i c =500ma, i b1 =i b2 =50ma 1.0 s i s/b * v ce =50v 0.2 a marking: full part number * pulsed: 1.0s non repetitive pulse. to-39 case r0 (27-august 2010) www.centralsemi.com
BUY49S high voltage npn silicon transistor to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number www.centralsemi.com r0 (27-august 2010)
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